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Berlin 2005 – scientific programme

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TT: Tiefe Temperaturen

TT 1: Superconductivity - Fabrication, Technical Optimization and Characterization

TT 1.2: Talk

Friday, March 4, 2005, 10:30–10:45, TU H104

Superconductivity on boron-doped diamond plates — •Dmitrij Bogdanov1, Klaus Winzer1, and Christoph Wild21I. Physikalisches Institut, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen — 2Fraunhofer Institut für Angewandte Festkörperphysik, Tullastr. 72, 79018 Freiburg i. Br.

We study boron-doped diamond plates prepared by the microwave-plasma-CVD technique. In contrast to diamond films on silicon substrates the absence of a substrate allows unequivocal measurements of the electrical resistivity and of the Hall coefficient of the doped diamond. The samples show semiconducting behaviour in the non-superconducting state down to the critical temperatures between 0,4 K < TC < 4 K. The upper critical fields BC2(0) scale with the transition temperatures TC; their values are up to 3 tesla. The hole concentrations were determined by the measurements of the Hall coefficient at temperatures near TC. The correlation of the calculated density of states N(EF) and TC will be compared with different theoretical models.

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