Berlin 2005 – scientific programme
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TT: Tiefe Temperaturen
TT 24: Symposium Nanomechanics
TT 24.5: Talk
Tuesday, March 8, 2005, 12:35–12:50, TU H104
Charge transport through a SET with a mechanically oscillating island — •Wolfgang Belzig1, Nikolai M. Chtchelkatchev2, and Christoph Bruder1 — 1Department of Physics and Astronomy, University of Basel, Klingelbergstr. 82, 4056 Basel, Switzerland — 2L.D. Landau Institute for Theoretical Physics, Russian Academy of Sciences, 117940 Moscow, Russia
We consider a single-electron transistor (SET) whose central island is a nanomechanical oscillator. The gate capacitance of the SET depends on the mechanical displacement, thus, the vibrations of the island may influence the transport properties. Harmonic oscillations of the island and thermal vibrations change the transport characteristics in different ways. The changes in the Coulomb blockade oscillations and in the current noise spectral density help to determine in what way the island oscillates, and allow to estimate the amplitude and the frequency of the oscillations.