Berlin 2005 – scientific programme
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TT: Tiefe Temperaturen
TT 36: Superconductivity - Vortex Dynamics, Vortex Phases, Pinning
TT 36.10: Talk
Wednesday, March 9, 2005, 12:30–12:45, TU H2053
Origin of the Resistive Transitions Broadening in Superconducting MgB2 Films — •A. S. Sidorenko1,2,3, V. I. Zdravkov2,3, E. Nold4, Th. Koch5, Th. Schimmel1,5, S. Horn2, C. Müller2, A. Wixforth2, and R. Tidecks2 — 1Institute of Applied Physics, Universität Karlsruhe, D-76128 Karlsruhe — 2Institut für Physik, Universität Augsburg, D-86159 Augsburg — 3Institute of Applied Physics, MD-2028 Kishinev, Moldova — 4Institute of Materials Research I, Forschungszentrum Karlsruhe, D-76021 Karlsruhe — 5Institute of Nanotechnology, Forschungszentrum Karlsruhe, D-76021 Karlsruhe
The discovery of superconductivity in MgB2, the material with hexagonal layered crystal structure, raised questions about its transport properties. The crystal structure of MgB2 and the band structure calculations suggest that the quasi-two-dimensional (2D) boron planes are mainly responsible for the charge transport. Therefore the superconducting properties of MgB2 are expected to reflect this 2D character. On the other hand, the layered structure should also influence the magnetic flux penetration and flux motion in the presence of an external magnetic field. In particular, thermally activated vortex creep processes (TAFF) play a crucial role in the resistive transitions broadening for MgB2 as well as for artificial multilayered systems. In the present work we report about experimental studies of the origin of resistive transitions broadening for MgB2 thin films.