Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
TT: Tiefe Temperaturen
TT 8: Posters Transport
TT 8.26: Poster
Freitag, 4. März 2005, 14:00–18:00, Poster TU C
Electronic Transport Measurements on Mass-Selected Silicon Clusters — •Jochen Grebing, Felix von Gynz-Rekowski, Bernd Briechle, Gerd Ganteför, and Elke Scheer — University of Konstanz, 78467 Konstanz, Germany
We present a setup to study electronic transport properties of single or a
few
clusters.
Using a magnetron sputter source, clusters can be produced and then be
soft-landed on opened adjustable metallic electrodes fabricated with a MCB
technique [1]. By closing the junction a single or a few clusters shall be
contacted and their electronic transport properties, i.e. current-voltage
curves, shall be examined in situ. According to theoretical
calculations a nonlinear behavior is expected for a bias >0.5 V for
Si4
clusters contacted with Al leads [2]. A systematic investigation of this
system shall provide information to verify these calculations. As a further
project these Si4 clusters shall be gated using a sandwich MCB technique
which is currently being developped.
[1] MCB: Mechanically Controllable Breakjunction
[2] C. Roland et al., Phys. Rev. B 66, 035332 (2002)