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TT: Tiefe Temperaturen

TT 8: Posters Transport

TT 8.32: Poster

Freitag, 4. März 2005, 14:00–18:00, Poster TU C

Nanoscale electrodes on cleaved edge semiconductor surfaces for molecular electronics applications — •Sebastian Strobel¹, Sebastian Luber¹, Dieter Schuh¹, Werner Wegscheider², and Marc Tornow¹ — ¹Walter Schottky Institut, TU München, 85748 Garching, Germany — ²Institut für Angewandte und Experimentelle Physik, U Regensburg, 93040 Regensburg, Germany

Current efforts in molecular electronics target at novel concepts for future nano-electronics thereby aiming at a fundamental understanding of charge transfer mechanism in (bio-) molecular ”wires” such as DNA. Starting point is the preparation of suitable nanogap - electrodes that serve as electrical contacts to the molecules.

We present a novel strategy based on a semiconductor heterostructure grown by molecular beam epitaxy that consists of a AlGaAs layer into which a thin layer of GaAs (5 - 20 nm) is embedded. After cleaving the structure an atomically flat plane is obtained. Subsequent selective etching of the GaAs layer perpendicular to that plane and evaporation of a few nanometer thick metal film yields the nano-gap electrodes.

We successfully bridged nano-gap electrodes with single, 30 nm diameter colloidal Au nano-particles by AC electric trapping. The resulting drop in resistance of up to seven orders of magnitude verified the electrical functionality of our devices. First measurements on electrodes functionalized with organic self-assembled monolayers will be presented.