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Berlin 2005 – scientific programme

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TT: Tiefe Temperaturen

TT 8: Posters Transport

TT 8.5: Poster

Friday, March 4, 2005, 14:00–18:00, Poster TU C

Spin relaxation in Quantum Dots induced by Nyquist Noise — •Florian Marquardt1 and Veniamin A. Abalmassov21Department of Physics, Yale University, New Haven 06520, USA — 2Institute of Semiconductor Physics SB RAS and Novosibirsk State University, 630090 Novosibirsk, Russia

We analyze the spin relaxation rate T1−1 for an electron inside a quantum dot that is subject to the Nyquist voltage fluctuations of the confining metallic gates. In combination with spin-orbit coupling, this leads to a relaxation rate that depends on the direction of the magnetic field and the impedance matrix of the gate circuit, providing possibilities for distinguishing this mechanism from other sources of relaxation.

[1] F. Marquardt and V. A. Abalmassov, cond-mat/0404749 (2004)

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