Augsburg 2006 – scientific programme
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P: Plasmaphysik
P 13: Niedertemperaturplasmen / Plasmatechnologie 4
P 13.5: Talk
Tuesday, March 28, 2006, 16:00–16:15, 1002
First Silicon Solar Cell produced by Plasma Methods — •Amir H. Sari1, Heinrich Hora2, Mahmoud Ghoranneviss1, Mahmoud R. Hantehzadeh1, and Reinhard Hoepfl3 — 1Plasma Physics Res. Ctr., Free Islamic Univ., Tehran — 2Theoret. Physics, Univ. NSW, Sydney — 3FH Deggendorf
When high density electron beams of 50 to 75 keV energy were producing defects in n-type silicon as measured from p-n junctions ∖1∖ there resulted in a hefty controversy with the Purdue School (Lark-Horowitz) since it was standard knowledge that electrons needed more than 200 MeV energy to remove an Si-atom from its lattice position. After the subthreshold defect generation was confirmed ∖2∖ and perhaps caused by a plasmon mechanism, the application for producing solar cells without the usual very aggressive and poison chemicals from inorganic as well as from organic semiconductors was an aim ∖3∖, but it first needed the cooperation between Australia, Iran and Germany until the first silicon solar cells were produced. It was essential that for this plasma-method, a new type of an electron beam for the electron energy and the necessary intensities was developed ∖3∖. Further details are reported. ∖1∖ H. Hora, Z. Angew. Physik, 14, 9 (1962); ∖2∖ Hinckley et al, Physica Status Solidi 51A, 419 (1979); ∖3∖ A.H. Sari et al. Laser and Particle Beams, 23, 467 (2005)