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P: Plasmaphysik
P 15: Diagnostik 2; Niedertemperaturplasmen / Plasmatechnologie 5; Plasma-Wand Wechselwirkung 1
P 15.12: Poster
Dienstag, 28. März 2006, 17:00–19:00, Flure
Subthreshold Defect Generation by intense Electron Beams in Semiconductors — •Mahmoud Ghoranneviss1, Amir H. Sari1, Mahmoud R. Hantehzadeh1, Heinrich Hora2, and Reinhard Hoepfl3 — 1Plasma Physics Res. Ctr., Free Islamic Univ., Tehran — 2Theor. PHysics, Univ. NSW, Sydney, Australia — 3FH Deggendorf
Against the knowledge that electrons of at least 200 keV energy are necessary to remove a silicon atom from its position in a crystal, high intensity electron beams of 50 and 75 keV energy were able to produce p-n junctions in silicon crystals. This subthreshold electron generation of crystal defects has been confirmed in different ways but the application to produce solar cells was never possible before. The development of a new type of an electron gun for very high beam currents an energies of 40 keV and above was performed at the PPRC ∖1∖ and applied to produce the very first silicon solar cells by this purely plasma technology avoiding and chemical method of the junction generation. This is important also for producing diodes and transistors in nano-technology for the size below the optical limit. Further work is reported about the use of organic semiconductors instead of silicon and similar single crystals. ∖1∖ A.H. Sari, et al. Laser and Particle Beams 23, 467-473 (2005)