Augsburg 2006 – wissenschaftliches Programm
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P: Plasmaphysik
P 4: Diagnostik 1; Niedertemperaturplasmen / Plasmatechnologie 2; Magnetischer Einschluß 2
P 4.16: Poster
Montag, 27. März 2006, 17:00–19:00, Flure
Characterisation of thin silicon nitride films deposited by plasma polymerisation — •L. Steiner, M. Walker, J. Krüger, A. Schulz, and U. Stroth — Universität Stuttgart, Institut für Plasmaforschung, Pfaffenwaldring 31, D- 70569 Stuttgart
Amorphous hydrogenated silicon nitride (SixNyHz) thin films deposited by plasma polymerisation become increasingly important, because of their extended applications in semiconductor industry. They are used as passivation layer, isolator and as coating in other industrial applications due to its chemical resistance and hardness. The chemical composition of the films, mainly the hydrogen content and the silicon nitride bond structure, has an impact on the electronic and optical properties, like for example the refraction index of the film. In consequence, the focal point of this study is to analyse the intensity and the shift of the Si-N and the Si-H band in the FTIR-absorption spectra of the film. All films are obtained in a low pressure plasma reactor, the Plasmodul, where an axially homogeneous plasma around the four parallel Duo-Plasmalines is generated by microwave power. In the experiments, the variation of the external parameters gas mixture, temperature and deposition time has been investigated. It turned out that the total gas flow, the average injected power and the substrate temperature have an important influence on the quality of the film. Based on literature and on the results of this study, a new parameter, the energy per molecule, has been investigated. In this work, a correlation between this parameter and the deposition rate will be presented.