Dresden 2006 – scientific programme
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AKB: Biologische Physik
AKB 10: Neuroscience
AKB 10.6: Talk
Tuesday, March 28, 2006, 13:00–13:15, ZEU 255
Analysis of the Neuron-Silicon Interface with a 2D Transistor Array — •Ralf Zeitler1, Armin Lambacher1, Roland Thewes2, and Peter Fromherz1 — 1Max Planck Institute for Biochemistry, Department of Membrane and Neurophysics, Martinsried/München — 2Infineon Technologies, Corporate Research, München
A twodimensional transistor array with a pitch of 7.8 µ m is used to study the electrical interfacing of neurons and silicon chips. The 128x128 array is implemented in extended CMOS technology. The open gates of the sensor transistors are insulated by titaniumdioxide. Identified neurons from Lymnaea stagnalis are cultured on the chip. The extracellular voltage in the cell-chip junction is recorded as it is induced by action potentials. The response is not homogeneous in the cell-chip contact, but exhibits dramatic variation in shape and amplitude.
For an interpretation we modelled the ionic membrane current on the basis of literature data and own patch-clamp measurements. Computed action potential shapes agree well with experimental intracellular records. The electrolyte in the narrow cleft between cell and chip was described by a two-dimensional Nernst-Planck equation. By comparing computed extracellular voltage patterns with experimental data it is possible to draw conclusions about the distribution of ion channels in the adhesion membrane.