Dresden 2006 – scientific programme
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CPP: Chemische Physik und Polymerphysik
CPP 21: SYMPOSIUM Functional Organic Thin Films II
CPP 21.3: Talk
Thursday, March 30, 2006, 14:45–15:00, ZEU Lich
Inversion layer formation in organic field-effect devices — •Thomas Lindner1, Gernot Paasch1, and Susanne Scheinert2 — 1IFW Dresden — 2TU Ilmenau
One of the challenges for polymer electronics is the realization of complementary circuits (CMOS) requiring both n− and p− channel transistors on the chip. Depositing both an electron- conducting and a hole- conducting organic material is technologically cumbersome. Only recently both n− and p− channels have been achieved in the same material. The problems to create both accumulation and inversion layers in the same material have been attributed to the difficulty to engineer the metallic source/drain contacts for efficient injection of both electron and holes, and also to the fact that the electron and hole mobilities differ (often) by several orders of magnitude. Although the formation of inversion layers has been well understood in microelectronics, it has to be studied anew, since the mobility and the intrinsic density are many orders of magnitude lower. An analytical estimate of the relation between three relevant characteristic times reveals the peculiarities occurring in the organics. Detailed insight is obtained from a numerical simulation study for MOS capacitors and transistors of different design. Both the design and the source/drain contact properties influence the formation of the inversion layer and the occurrence of hysteresis effects significantly.