Dresden 2006 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

CPP: Chemische Physik und Polymerphysik

CPP 23: POSTER Functional Organic Thin Films

CPP 23.25: Poster

Thursday, March 30, 2006, 17:00–19:00, P2

Analysis of OTFT Device Parameters based on Measurement and Simulation of IV and CV Characteristics — •Christoph Erlen and Paolo Lugli — Munich University of Technology

Advances in fabrication techniques have led to organic TFTs (OTFTs), which are increasingly interesting for electronic applications. We have used different methods including finite element device simulations in a commercial environment (ISETCAD)[1] in order to extract relevant material and transistor parameters from experimental data. Dynamic CV measurements have been analyzed to crosscheck results for e.g. interface charges and trap densities obtained by simulation. These measurements are additionally employed to address dynamic OTFT characteristics. It is shown that next to material properties, device layout plays an important role in determining the transient transistor behavior. The research is conducted in close cooperation with M. Fiebig, S. Schiefer, M. Huth, U. Beierlein and B. Nickel, Department fuer Physik, Ludwig-Maximilians Universitaet, Munich, who provided the experimental data for bottom contact Pentacene TFTs.

[1] Bolognesi et al. IEEE Trans. Elect. Dev., 51(12):1997, 2004.