Dresden 2006 – wissenschaftliches Programm
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DF: Dielektrische Festkörper
DF 1: Internal Symposium “Integrated Electroceramic Functional Structures”
DF 1.4: Vortrag
Montag, 27. März 2006, 10:50–11:10, M{\"U}L Elch
Inorganic and organic layers for high-k and organic memory applications — •Karsten Henkel, Mohmaed Torche, Carola Schwiertz, Ioanna Paloumpa, Rakesh Sohal, Klaus Müller, and Dieter Schmeißer — Brandenburgische Technische Universität Cottbus, Angewandte Physik-Sensorik, 03013 Cottbus, P.O. Box 101344, Germany
We report about organic and inorganic MIS stacks for new possibilities for high frequency and high power applications as well as for non volatile memory cell. The organic stack contains a ferroelectric polymer as the functional layer.
Poly[vinylidene fluoride trifluoroethylene] (P[VDF/TrFE]) is spin coated from a solution onto oxidised silicon substrates. We report on the polarisation induced flatband voltage shifts.
For the inorganic stack our attempt is to combine higk-k dielectrics with high band gap semiconductors (SiC). Praseodymium oxide layers are prepared by electron beam evaporation from Pr6O11 powder and in situ controlling of interface and volume composition (XPS). Praseodymium silicate layers were prepared either by metal evaporation onto a thin oxide on top of the semiconductor and following annealing steps or by a wet chemical process out of aqueous Pr(NO3)3 solutions. Using spectroscopic characterisation we investigate the stability of the various interfaces within the stacks as well as the reactivity of the metal electrodes on thin Pr2O3. We report the results of electrical characterisation consisting of permittivity values, leakage current and density of interface states.