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DF: Dielektrische Festkörper

DF 1: Internal Symposium “Integrated Electroceramic Functional Structures”

DF 1.5: Vortrag

Montag, 27. März 2006, 11:10–11:30, M{\"U}L Elch

Resistive Switching in Pt/TiO2/Pt Thin Film Capacitors for Non-volatile Memory Applications. — •Doo Seok Jeong and Herbert Schroeder — IEM / IFF and CNI, Forschungszentrum Jülich GmbH, Germany.

Non-volatile memory (NVM) devices such as switchable resistors (ReRAM) are discussed for future ultra-large scale-integrated memory chips in cross-bar architecture because of their simple geometry. Among the large variety of candidates under discussion are ferroelectric and paraelectric oxides. We have produced metal/insulator/metal (MIM) capacitor structure with sputtered TiO2 thin films between platinum electrodes showing resistive memory switching. The DC electrical properties were measured in dependence of applied voltage or current, temperature and sample geometry. The main results are: a) All produced titanium oxide films are insulating and amorphous with stoichiometry close to TiO2. b) The films had to be electroformed at 5 to 8 V to show resistive switching. A current compliance between 1 and 10 mA had to be applied to induce the electroforming successfully, but not to degrade the film completely (permanent dielectric breakdown). c) The *Reset* voltage to the higher resistance state (*Off*-state) was 0.7 +/- 0.1 V. The resistance ratio between *On*- and *Off*-state was of the order of 1000. The set voltage for inducing the *On*-state again showed larger variations, 1.5 +/- 0.25 V, with a similar current compliance. The results will be discussed in the light of common mechanisms for resistive switching.