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DF: Dielektrische Festkörper

DF 2: Dielectric and Ferroelectric Thin Films and Nanostructures I

DF 2.4: Vortrag

Montag, 27. März 2006, 15:50–16:10, M{\"U}L Elch

GROWTH-MICROSTRUCTURE-PROPERTY RELATIONS IN EPITAXIAL FERROELECTRIC PbZr0.2Ti0.8O3 FILMS — •Ionela Vrejoiu, Gwenael Le Rhun, Lucian Pintilie, Nikolai Zakharov, Dietrich Hesse, and Marin Alexe — Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D 06120, Halle

Epitaxial PbZr0.2Ti0.8O3 (PZT) films were grown by pulsed laser deposition (PLD) onto vicinal SrTiO3 (001) (STO) single crystal substrates. Step flow-grown SrRuO3 (SRO) fabricated by PLD was employed as bottom electrode, to allow for electrical characterization of the PZT films. The atomically flat surface of the SRO layer may act as a template for layer-by-layer growth of the subsequent layers. It may thus result in very smooth and defect-free PZT layers with remnant polarization values of up to Pr= 1 C/m2. The influence of defects such as threading and misfit dislocations along with formation of 90^∘ domains on the ferroelectric and switching properties of the films is also discussed.