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DF: Dielektrische Festkörper

DF 2: Dielectric and Ferroelectric Thin Films and Nanostructures I

DF 2.7: Vortrag

Montag, 27. März 2006, 16:50–17:10, M{\"U}L Elch

Praseodymium silicate high-k dielectric layers on Si(100) — •Grzegorz Lupina, Thomas Schroeder, Jarek Dabrowski, Christian Wenger, Anil Mane, Gunther Lippert, and Hans-Joachim Müssig — IHP, Im Technologiepark 25, 15236 Frankfurt (Oder)

Praseodymium silicate dielectrics were investigated as potential replacement for SiO₂ gate insulator in complementary metal-oxide-semiconductor (CMOS) applications. Physical characterization by applying TEM and SR-XPS indicate that the prepared dielectrics have a bilayer structure: an SiO₂-rich Pr silicate at the interface to Si substrate and an SiO₂-poor Pr silicate on top of the dielectric stack. Photoemission studies point to a reasonably high valence and conduction band offsets of ∼ 3 eV and ∼ 2 eV, respectively. Electrical characterization of the dielectrics was accomplished by capacitance-voltage and current-voltage measurements providing insight into the interface state density, fixed charge concentration, and the dominating conduction mechanisms. Based on the results of ab-initio calculations, the most probable fixed charge formation mechanisms in Pr silicates are discussed. Thermal treatments prove that Pr silicate / Si (100) system is compatible with the conventional CMOS processing.