Dresden 2006 – wissenschaftliches Programm
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DF: Dielektrische Festkörper
DF 2: Dielectric and Ferroelectric Thin Films and Nanostructures I
DF 2.8: Vortrag
Montag, 27. März 2006, 17:10–17:30, M{\"U}L Elch
Intrinsic tunneling in perovskite derivatives: switching of resistive states and negative differential resistance — •P. Müller1, F. Chowdhury1, Y. Koval1, V. Dremov1, F. Lichtenberg2, and J. Mannhart2 — 1Physikalisches Institut III der Universität Erlangen-Nürnberg, Erwin-Rommel Str. 1, 91058 Erlangen, Germany — 2Experimentalphysik VI der Universität Augsburg, 86135 Augsburg, Germany
In many cases, perovskite related compounds with excess of oxygen can be described as materials with alternating conducting and insulating layers. Electric transport across these layers can be considered as tunneling between the conducting layers. We investigated several materials of the family AnBnO3n+2, like LaTiO3.41 and SrNbO3.41, which can be considered as a stacking of blocks consisting of 5 perovskite layers. We measured I-V characteristics at different temperatures. Switching between different resistive states has been found in some of these materials. The resistive states have long-term stability, which makes them interesting for memory applications. Furthermore, our materials show negative differential resistance at low temperatures. We present a summary of our recent results.