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DF: Dielektrische Festkörper
DF 3: Poster Session
DF 3.20: Poster
Montag, 27. März 2006, 09:30–17:00, P1
Electrical, photoelectrical and optical properties of Ru-doped Bi12M(Si,Ti)O20 crystals — •Vera Marinova1, S. H. Lin2, K. Y. Hsu2, Boriana Mihailova1, and Ulrich Bismayer1 — 1Universität Hamburg, Mineralogisch-Petrographisches Institut, Grindelallee 48, D-20146 Hamburg — 2Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan
Bi12TiO20 (BTO) and Bi12SiO20 (BSO) sillenite-type crystals doped with different concentration of ruthenium are grown using the Top Seeded Solution Growth method (TSSG) and by the Czochralski technique, respectively. The addition of ruthenium shifts the optical absorption to the red and to the near IR spectral range for BSO and BTO, respectively. It is found that the relaxation (dark decay) of the light induced absorption consists of fast (transient) and a slow (persistent) component, suggesting participation of shallow levels in a charge-transport mechanism. The dark conductivity follows the Arrhenius law. The Ru-doped BSO crystal shows very fast response time during holographic recording at 633 nm and 647 nm. The Ru-doped BTO possesses infrared sensitivity and photorefractive gratings are successfully recorded at 790 nm and 825 nm.