Dresden 2006 – wissenschaftliches Programm
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DF: Dielektrische Festkörper
DF 3: Poster Session
DF 3.4: Poster
Montag, 27. März 2006, 09:30–17:00, P1
Computer simulation of nanoporous dielectrics — •Antje Elsner1,2, Helmut Hermann1, and Dietrich Stoyan2 — 1Institute for Solid State and Materials Research, IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany — 2Institute of Stochastics, Freiberg University of Mining and Technology, D-09596 Freiberg, Germany
New dielectric materials for future semiconducting circuits are needed to compensate the increasing capacity due to decreasing dimensions of interconnects. One promising way to get dielectrics with very low k-values is to use nanoporous material. Porous dielectric materials are simulated by dense random packings assuming a nearly spherical shape of pores. The pores are approximated by spheres whereas the material is represented by the space around. By extending the algorithm to arbitrary continous diameter distributions it is possible to optimise such structures with respect to maximum porosity and adequate machanical stability. Basic parameters of the material can be calculated, such as elastic constants and estimations of k-value. Some parameters of the simulated sphere packings can be used to characterize porous media, for example contact number, local density, specific surface area and diameter distribution.