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DF: Dielektrische Festkörper

DF 3: Poster Session

DF 3.6: Poster

Montag, 27. März 2006, 09:30–17:00, P1

Thickness dependence of specific dc-conductivity of thin-film- ion-conductors — •M. Sh. Abouzari, Frank Berkemeier, Tobias Stockhoff, and Guido Schmitz — Westfälische Wilhelms- Universität Münster, Institut für Materialphysik, Wilhelm-Klemm-Str.10, 48149 Münster

Ion-conducting, amorphous thin films with a thickness of 50-1000 nm are prepared by ion beam sputtering using a glass target of composition 0.2 Li2O 0.8 B2O3. The glass layers are deposited on a silicon substrate between two sputtered electrodes of an Al-Li alloy. Temperature- dependent impedance spectroscopy allows determining the specific dc-conductivities. Recent research work has concentrated on the dependence of the conductivities on the thickness of the films. The conductivity increases significantly with decreasing of film thickness. Close to room temperature, the conductivity of 50 nm thick films exceeds that of 1000 nm thick films by at least one order of magnitude.