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DF: Dielektrische Festkörper
DF 4: Internal Symposium “Ferroelectric Materials for Smart Structures”
DF 4.5: Talk
Tuesday, March 28, 2006, 11:10–11:30, K{\"O}N Farb
Point defects and pinning centres in acceptor- and donor-doped ferroelectrics — •Rüdiger-A. Eichel — TU Darmstadt, Eduard-Zintl Inst., Petersenstr. 20, 64287 Darmstadt
Point defects in ferroelectric oxides play an important role for tailoring device properties. In particular, if the pinning of mobile oxygen vacancies is considered that drastically may influence the ability of ionic conductivity in such compounds. On the other hand, quasi-immobile lead vacancies promote domain switching.
High-frequency and multi-pulse electron paramagnetic resonance (EPR) is used in order to study the role of aliovalent functional centres and their impact on lattice vacancies in PbZrxTi1−xO3.
[1] R.-A. Eichel, H. Kungl, M.J. Hoffmann, J. Appl. Phys. 95 (2004) 8092-8096
[2] H. Mestric, R.-A. Eichel, K.-P. Dinse, A. Ozarowski, J. van Tol, L.C. Brunel, J. Appl. Phys. 96 (2004) 7440-7444
[3] R.-A. Eichel, H. Mestric, K.-P. Dinse, A. Ozarowski, J. van Tol, L.C. Brunel, H. Kungl, M.J. Hoffmann, Magn. Reson. Chem. 43 (2005) S166-S173
[4] H. Mestric, R.-A. Eichel, T. Kloss, K.-P. Dinse, So. Laubach, St. Laubach, P.C. Schmidt, K.A. Schönau, M. Knapp, H. Ehrenberg, Phys. Rev. B 71 (2005) 134109
[5] R.-A. Eichel, K.-P. Dinse, H. Kungl, M.J. Hoffmann, A. Ozarowski, J. van Tol, L.C. Brunel, Appl. Phys. A 80 (2005) 51-54