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DF: Dielektrische Festkörper

DF 4: Internal Symposium “Ferroelectric Materials for Smart Structures”

DF 4.8: Vortrag

Dienstag, 28. März 2006, 12:10–12:30, K{\"O}N Farb

Fullerene-based hypothetical ultra-low k dielectrics for microelectronic application — •Kostyantyn Zagorodniy, Manfred Taut, Helmut Hermann, and Klaus Wetzig — Institute for Solid State and Materials Research, IFW Dresden, PF 270116, D-01171 Dresden

Fullerene-based structures are shown to be good candidates for materials with very low dielectric constant. It is our idea to use the C60 fullerene as structural unit and to connect neighbouring C60 molecules by other molecules which have approximately linear shape (for example CnH2n). Such units are the base for the generation of a 3D network with low density and high mechanical stability. The introduction of bridge molecules can be understood as the creation of pores in the fullerene lattice on the 1nm scale. This results in a considerable decrease of the macroscopic polarizability of the material. In this study we analyze the influence of the length of the CnH2n bridge molecules on the properties of the material and the influence of adding fluorine to the C60 molecules. The electronic properties and the local polarizability of the structural units is expected to be changed by fluorination of the fullerenes. Quantum chemical methods are applied to calculate the local polarizability of fluorinated fullerenes. Possible improvements and the limitations are discussed.