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DS: Dünne Schichten

DS 16: Ion beam solid interaction I

DS 16.3: Vortrag

Donnerstag, 30. März 2006, 10:30–10:45, GER 37

Swift Heavy Ion induced Modifications in Thin Halogenide Coatings — •Hartmut Paulus, Thunu Bolse, and Wolfgang Bolse — Institut für Strahlenphysik, Universität Stuttgart

Thin layers of several Halogenides have been deposited onto Silicon and Silicon Oxide substrates by thermal evaporation at different substrate temperatures. The samples were irradiated with swift heavy ions (SHI) of various energies and fluences at a temperature of about 80K. The irradiated as well as the remaining unirradiated parts of the samples were characterized by Rutherford backscattering spectrometry. In selected cases also scanning electron and atomic force microscopy as well as surface profilometry and X-ray diffraction were performed.

Low temperature (300K) deposition results in rough layers, which upon SHI irradiation significantly smoothen. The latter can be attributed to grain size reduction and compaction of the material. Substrate temperatures around 900K on the other hand result in already smooth layers. Higher fluences lead to significant intermixing of the coating with the Silicon Oxide substrate, while the interfaces (and surfaces) of the films deposited onto Si remain smooth. At very high fluences a reduction of the film thickness can be observed due to sputtering and in some cases circular holes of sub-micrometer dimensions form, which point at SHI induced dewetting phenomena similar to those recently reported for thin oxide films.