Dresden 2006 – scientific programme

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DS: Dünne Schichten

DS 18: Thin semiconducting films

DS 18.2: Talk

Thursday, March 30, 2006, 09:45–10:00, GER 38

On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111) — •Thomas Schroeder, Christian Wenger, and Hans-Joachim Müssig — IHP-Microelectronics, Im Technologiepark 25, 15236 Frankfurt - Oder

The preparation of truly single crystalline oxide films on Si substrates is a challenge in modern oxide physics. Twin-free epitaxial cubic (111) praseodymium sesquioxide films were prepared on Si(111) by hexagonal to cubic phase transition. Synchrotron radiation grazing incidence X-ray diffraction and Transmission electron microscopy were applied to characterize the phase transition and the film structure. As-deposited films grow single crystalline in the (0001) oriented hexagonal high-temperature phase of praseodymium sesquioxide. In-situ X-ray diffraction studies deduce an activation energy of 2.2 eV for the hexagonal to cubic phase transition. Transmission electron microscopy shows that the phase transition is accompanied by an interface reaction at the oxide / Si(111) boundary. The resulting cubic(111) low-temperature praseodymium sesquioxide film is single crystalline and exclusively shows B-type stacking. The 180^∘ rotation of the cubic oxide lattice with respect to the Si substrate results from a stacking fault at the substrate / oxide boundary.