Dresden 2006 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 18: Thin semiconducting films
DS 18.4: Vortrag
Donnerstag, 30. März 2006, 10:15–10:30, GER 38
Atomic vapour deposition of high-k HfO2: Growth kinetics and electrical properties — •Anil Mane1, Christian Wenger1, Jarek Dabrowski 1, Grzegorz Lupina1, Thomas Schroeder1, Gunther Lippert1, Roland Sorge1, Peter Zaumseil1, Günter Weidner1, Ioan Costina 1, Hans-Joachim Müssig1, Sergej Pasko 2, Ulrich Weber2, Vincent Méric 2, and Marcus Schumacher2 — 1IHP-Microelectronics, Im Technologiepark 25, 15236 Frankfurt (O), Germany — 2AIXTRON AG, 52072 Aachen, Germany
Atomically smooth thin layers of HfO2 were grown by atomic vapour deposition (AVD) from tetrakis(ethylmethlyamido)Hf {Hf(NEtMe)4} precursor and O2. All the depositions are carried at substrate temperature 400 ∘C on thermally grown SiO2 (≈2 nm) on 200 mm p-Si(100) wafers under various deposition conditions. These layers were amorphous as deposited, as shown by x-ray diffraction and transmission electron microscopy. The atomic force microscopy and ellipsometry scans confirm the HfO2 layers were deposited uniformly over the substrate in the thickness of 4 to 50 nm. Chemical compositions of these layers were studied by time-of-flight secondary ion mass spectrometry (TOFSIMS) and x-ray photoelectron spectroscopy (XPS). Deposited layers demonstrated well behaved capacitance as function of gate voltage (C-V) curve and leakage current density as low as 10−8 A/cm2 at 1 V. The effective permittivity of theses layers ranges from 9 to 20 depending on growth conditions. Post deposition annealing in oxygen ambient improve the dielectric properties in great extent, which could explain the role of oxygen partial pressure and temperature for HfO2 growth.