Dresden 2006 – scientific programme
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DS: Dünne Schichten
DS 19: Thin film deposition and process characterization I
DS 19.4: Talk
Thursday, March 30, 2006, 12:15–12:30, GER 38
Role of positive ions in reactive sputtering of Al-doped ZnO thin films — •F. Ruske1, V. Sittinger1, W. Werner1, B. Szyszka1, R. Wiese2, M. Hannemann2, and H. Kersten2 — 1Fraunhofer IST, Bienroder Weg 54 E, D-38108 Braunschweig — 2INP Greifswald, F.-L.-Jahn-Str. 19, D-17489 Greifswald
Highly conductive, transparent films (ITO, SnO2, ZnO) are of significant interest i.e. in the field of thin film photovoltaics, flat panel display or automotive glazings. Especially ZnO-based films have attracted much interest due to low material cost at accaptable film properties in respect to ITO. Reactive magnetron sputtering of metallic Zn/Al-targets has shown to be a suitable way to produce high quality Al-doped ZnO thin films.
In order to characterize the deposition process films have been deposited onto stationary substrates and characterized in respect to chemical composition, texture, etching behaviour as well as optical and electrical properties. In these measurements significant differences in respect to films deposited onto moving substrates can be found.
The key to understanding properties distributions are particle and energy fluxes onto the substrate. We present measurements with a retarding field analyzer (RFA) yielding energy-resolved distributions of positive ions. The measurements show that no highly energetic ions with positive charge are obtained with the present setup and most ions originate from the Debye sheath. Measurements of total energy flow show that energy introduction by positive ions plays only a minor role in the examined process.