Dresden 2006 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 20: Ion beam induced nanostructures
DS 20.5: Vortrag
Donnerstag, 30. März 2006, 15:30–15:45, GER 37
Ripple to dot transition on Si and Ge surfaces by ion beam erosion — •Bashkim Ziberi1, Frank Frost1, Dina Carbone2, Hartmut Metzger2, and Bernd Rauschenbach1 — 1Leibniz-Institut für Oberflächenmodifizierung e. V., Permoserstr. 15, D-04318 Leipzig, Germany — 2ID01, ESRF, Grenoble, France
In the last years, pattern formation during low-energy ion beam erosion becomes a promising tool for large-area and cost-efficient nanostructuring of surfaces. Due to self-organization processes caused by low-energy ion beam erosion, well arranged nanostructures can evolve on different materials. In this contribution results for noble gas ion beam erosion (ion energy ≤ 2000 eV) of silicon and germanium semiconductor surfaces under oblique ion incidence without sample rotation are presented. It will be shown that in both materials there is a continuous transition from ripple to dot patterns by varying the ion incidence angle from 5 deg up to 35 deg. The evolving dots, with a mean size of ≈ 45 nm, show a large area ordering given by the previous existence of ripples. For Si square arrays of almost perfectly ordered dots evolve on the surface, while for Ge the dots show a hexagonal ordering. The formation of the dot nanostructures is influenced by different parameters of the ion beam. Additionally, a appropriate adjustment of the ion optical parameters of the broad beam ion source offers the possibility to influence the large-area ordering of dots. The surface topography and structure ordering are analyzed using high resolution scanning force microscopy (AFM) and grazing incidence small angle x-ray scattering and diffraction (GISAXS/GID).