Dresden 2006 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

DS: Dünne Schichten

DS 24: Poster presentation

DS 24.18: Poster

Dienstag, 28. März 2006, 15:00–17:30, P2

Electrical transport mechanisms in growing Pd thin films - modified by hydrogen loading — •Stefan Wagner, Olof Dankert, and Astrid Pundt — Institut für Materialphysik, Georg- August- Universität Göttingen, Friedrich- Hund- Platz 1, 37077 Göttingen

During thin film growth the electrical resistivity of the film changes within orders of magnitude. Different conduction mechanisms can be identified, dominating the conductivity in the different stages of growth. These stages depend on the substrate that, on the one hand, modifies the shape of the islands and, conversely, contributes differently to the conduction mechanisms.

Resistance measurements during thin film growth are presented and divided into regimes where charge tunnelling, island percolation and thin film properties are dominating. The conduction regimes are described in terms of thermally activated tunnelling, percolation theory and modified Fuchs- Sondheimer theory, and the model parameters are determined.

The influence of hydrogen loading on the conduction behaviour of a discontinuous film is shown and appears strongly substrate dependent. It will be discussed in terms of magnitude, reversibility and switching time.