Dresden 2006 – scientific programme

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DS: Dünne Schichten

DS 24: Poster presentation

DS 24.23: Poster

Tuesday, March 28, 2006, 15:00–17:30, P2

Annealing effects on VO₂ thin films deposited by reactive sputtering — •Ganhua Fu, Angelika Polity, Niklas Volbers, and Bruno K. Meyer — I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, D-35392, Giessen

Due to the switching of the optical properties at semiconductor-metal phase transition, VO₂ can be used as infra-red light (IR)-switching or bolometric devices or as intelligent energy conserving window coating. In this work, two VO₂ film systems (bare VO₂ film on float glass and W doped VO₂ film with a TiO₂ capping layer) were deposited by radio-frequency reactive sputtering. Their thermal stability was investigated by annealing the films in air at different temperatures. It was found that the VO₂ thin film is quite stable in air below 200 ^∘C. However, after annealing in air at 300 ^∘C, the pure VO₂ film was oxidized to a V₂O₅ film. The W doped VO₂ layer with a TiO₂ capping layer lost its switching property after annealing at 400 ^∘C for 10 min due to inter-diffusion.