Dresden 2006 – scientific programme
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DS: Dünne Schichten
DS 24: Poster presentation
DS 24.31: Poster
Tuesday, March 28, 2006, 15:00–17:30, P2
Hf silicide growth on Si(100) studied by angle-scanned photoelectron diffraction — •A. de Siervo1,2, S. Dreiner1, C. Flüchter1, D. Weier1, M. Schürmann1, U. Berges1,3, M. F. Carazzolle4, A. Pancotti4, R. Landers2,4, G. G. Kleiman4, and C. Westphal1,3 — 1Experimentelle Physik 1 - Universität Dortmund, Otto-Hahn-Str. 4, 44227 Dortmund, Germany — 2Laboratório Nacional de Luz Síncrotron, C.P. 6192, 13084-971 Campinas, SP, Brazil — 3DELTA, Universität Dortmund, Maria-Goeppert-Mayer-Str. 2, 44227 Dortmund, Germany — 4Instituto de Fisica, Universidade Estadual de Campinas, C.P. 6165, 13083-970 Campinas, SP, Brazil
Presently, alternative materials are extensively studied to replace the classical SiO2 in new generation semiconductor devices. HfO2 is one promising candidate. However, up to now, only very few studies on HfSi films are available and a structure determination is completely missing.
We present the results of a photoelectron diffraction study of Hf silicide growth on Si(100). The films were prepared in UHV by evaporating Hf to clean silicon surfaces and subsequent annealing. Full 2π angle scanned photoelectron diffraction patterns of Hf 4f and Si 2p signals were measured using conventional Mg Kα and synchrotron radiation. Diffraction patterns for low electron kinetic energies were obtained using photon energies of hν=180 eV of the undulator beamlines U250 and U55 of DELTA (Dortmund). At these energies, multiple scattering effects occur and a data analysis was only possible within a comprehensive multiple scattering calculation. We compare experimental and calculated results and present a structure model for the silicide films.