Dresden 2006 – scientific programme

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DS: Dünne Schichten

DS 24: Poster presentation

DS 24.41: Poster

Tuesday, March 28, 2006, 15:00–17:30, P2

Ultra thin Aluminium oxide films on silicon — •Mandana Roodbari Sh. and Ali Bahari — Physics Department, Mazandran University, Iran

Ultra thin aluminium oxide films, have been identified as potential candidates to replace conventional silicon oxide gate dielectrics in current and future CMOS. Because a shrinking of the silicon oxide thickness with one atomic layer for the next generation will lead to a couple of orders of magnitude increase in tunneling current. Another critical issue for future generations is gate oxide degradation due to boron penetration into the oxide from the poly-silicon gate electrode. We have demonstrated a number of new processes to grow ultra thin aluminium oxides. These sudies have demonstrated a number of new processes to grow ultra thin aluminium oxides.

Two step processes have been employed including evaporation of aluminium to less than monolayer coverage followed by oxygen oxposure. For these investigations of nano-properties and atomic growth processes, the availability of synchrotron radiation with high quality and stability, as met at ASTRID, Aarhus in Denmark, has been important.

Therefore, the present method can be used to deposit uniform aluminium oxide layers of the relevant effective thickness for coming generations of devices directly on silicon surfaces, with atomically sharp interfaces.