Dresden 2006 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
DS: Dünne Schichten
DS 24: Poster presentation
DS 24.43: Poster
Tuesday, March 28, 2006, 15:00–17:30, P2
Electrophysical properties of TiN thin films deposited by plasma treatment — •Elena Shcherbakova — Minsk, Belarus
In this work the dependence of resistivity of titanium nitrides thin films upon changes in their structure and phase composition as a result of processing with hydronitrogen plasma was found. By means of transmission-electron microscopy and electron diffractometry regularity of structural and phase transformations in titanium thin films irradiated with plasma of arc discharge were investigated. Conditions of processing by plasma for formation of titanium nitrides thin films with resistivity 50 µOhm/cm were determined.
The results of studies show that the titanium films obtained have resistivity ≈110 µOhm/cm. This films polycrystalline and fine-grained, with the average grain size of 5-10 nm. When the films is exposed to hydronitrogen plasma at 500 ∘C, TiN and Ti2N are formed and resistivity is increased to 210 µOhm/cm. As treatment temperature is increased to 600∘C, the nitride phase having a small amount of nitrogen disappears, and a film of golden colour, consisting entirely of TiN, is formed. Further increasing of temperature to 750∘C does not change phase composition, but the average grain size is increased to ≈120 nm. At temperatures up 600 to 750∘C titanium nitride films had a small resistivity of 50-60 µOhm/cm.