Dresden 2006 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 24: Poster presentation
DS 24.51: Poster
Dienstag, 28. März 2006, 15:00–17:30, P2
Reflectance Anisotropy Spectroscopy in the VUV range for the characterisation of thin organic layer — •Philipp Myrach1,2, Christoph Cobet2, Regina Paßmann2,1, Norbert Esser2, and Wolfgang Richter1 — 1Technische Universität Berlin, Inst. f. Festkörperphysik, PN6-1, Hardenbergstr. 36, 10623 Berlin — 2Institut for Analytical Science, Albert Einstein Str. 9, D-12489 Berlin
In the last couple of years organic-based electronics becomes increasingly important. So organic functionalization is relevant to develop new semiconductor devices. To investigate the molecules attachment and the formation of the thin layers the method of Refletance Anisotropy Spectroscopy(RAS) should be very useful. This method allows to give an fast, non-destructive and in-situ characterisation of the optical and electronic properties.
Optical characterisation of semiconductors is usually done in the visible-UV spectral range. But ab-initio calculations show that the characteristic HOMO-LUMO transitions of many relevant organic molecules and transitions between substrate and organic layer stats are located in the VUV range(above 5eV). Due to this predictions, we have extented the RAS to the VUV spectral range.
When using an optically isotropic substrate material, RAS technique is very sensitive to surfaces or interfaces. Thus RAS measures the difference of reflectance between the thin film optical axies. Therefore its possible to study organic layers with an single layer sensitivity.