Dresden 2006 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

DS: Dünne Schichten

DS 24: Poster presentation

DS 24.63: Poster

Tuesday, March 28, 2006, 15:00–17:30, P2

Correlation between Plasma Homogeneity and Lateral Ion Flux Distribution in Plasma Immersion Ion Implantation — •Johanna Lutz, Oliver Otto, and Stephan Mändl — Leibniz-Institut für Oberflächenmodifizierung, Leipzig, Germany

Plasma immersion ion implantation (PIII) is a modern technology for surface modification allowing the simultaneous implantation into complex shaped objects, thus facilitating the formation of functional surfaces for several technologically important areas like biomedicine, automotive and textile industry. However, the local ion flux density, which cannot be measured directly, strongly depends not only on the plasma parameters but additionally on the sample geometry and the applied pulse voltage. In this experiment, the variation of the lateral ion flux density was studied using circular samples ranging from 60 to 150 mm, consisting of thin SiO₂ on Si. Argon as well as nitrogen plasma was used with acceleration voltages between 5 and 10 kV. The amount of material removed by the impinging ions was determined by spectroscopic ellipsometry. For comparison, the ion flux density was calculated from the plasma sheath dynamics using plasma densities and electron temperatures measured with a Langmuir probe. Good agreement between both values was observed using sputter yields from SRIM calculations. Next to a strong correlation between plasma density variations and the flux distribution, additional influences of the sample size and the plasma sheath width were found.