Dresden 2006 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 24: Poster presentation

DS 24.69: Poster

Dienstag, 28. März 2006, 15:00–17:30, P2

Ion beam technology as a solution for EUV lithography — •Jens Dienelt¹, H. Neumann¹, M. Kramer¹, E. Schubert¹, B. Rauschenbach¹, M. Nestler², A. Tarraf², and M. Schultze³ — ¹Leibniz-Institut für Oberflächenmodifizierung e.V. (IOM), Permoserstr. 15, 04318 Leipzig, Germany — ²Roth & Rau Oberflächentechnik AG, Gewerbering 3, 09337 Hohenstein Ernstthal, Germany — ³AIS Automation GmbH, Otto-Mohr-Straße 6, 01237 Dresden, Germany

A novel ion beam sputter deposition tool (Seg-IonSys-1900) for EUV mask blank fabrication and the pertaining deposition equipment will be presented. The main goal of this tool concept is to avoid the particle generation in the PVD deposition process by a special substrate motion and transfer system without losing the other required properties of the Mo/Si multilayer stack. The basis of this new concept idea is the application of a linear ECR ion beam source with a segmented grid system for beam profile control. The use of this ion beam source allows to minimize the substrate motion without loss of layer homogeneity and thickness stability in the deposition process itself. The ion beam source is equipped with a focused three grid extraction system, where high ion current densities results and with it deposition rate of 3.5 Ås⁻¹ for Si and 2.5 Ås⁻¹ for Mo. Based on this rates a total deposition time for a 50 multi layer stack of less than 45 min will be possible. With respect to this source and motion concept a special handling and transfer mechanism is demonstrated and the target drum construction with 16 single targets will be discussed in respect to the new concept and layer quality demands. Results of EUV-multilayer stacks with 50 pairs are discussed by reflectivity data (Cu-Kα and at EUV wavelength of 13.4 nm), TEM and AFM measurements.