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DS: Dünne Schichten
DS 24: Poster presentation
DS 24.71: Poster
Dienstag, 28. März 2006, 15:00–17:30, P2
Nanostructure formation on ion eroded SiGe and Si surfaces — •Christian Hofer1, Christian Teichert1, Markus Wächter2, Thomas Bobek2, Heinrich Kurz2, Klara Lyutovich3, and Erich Kasper3 — 1Institute of Physics, University of Leoben, Austria — 2Institute of Semiconductor Technology, RWTH Aachen, Germany — 3Institute of Semiconductor Engineering, University of Stuttgart, Germany
Atomic Force Microscopy has been applied to study the morphological evolution of heteroepitaxial SiGe/Si(001) films and Si(001) substrates under normal incidence noble gas ion bombardment. For self organized films we investigate the influence of different starting morphologies and ion energies on the subsequent pattern formation. In general, two different energy regimes were found. For ion energies above 500 eV up to 1000 eV the surface smoothens, whereas in the low energy regime the surface roughens and craters with a diameter of 70 nm evolve [1]. For samples with pyramidal pits surrounded by {105} faceted islands, the different sputter velocities of protrusions and pits could be revealed. The ion erosion of Si(001) results in the dot formation with inhomogeneous distribution. Here, the lateral dot sizes range from 30 nm to 40 nm with dot heights of 2 nm. The influence of the ion energy and sputter depth on the pattern formation is discussed.
Research supported in the framework of the EC project NAMASOS (Nanomagnets by Self-Organisation, STRP 505854-1) and by FWF Austria, P14009-TPH. www.unileoben.ac.at/~spmgroup
[1] C. Hofer et al., Nucl. Instrum. Meth. B. 216, 178 (2004).