Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

DS: Dünne Schichten

DS 24: Poster presentation

DS 24.7: Poster

Dienstag, 28. März 2006, 15:00–17:30, P2

Method of Crystallization Mechanism Control During Epitaxy from Solution-Melt — •Yewgen Baganov, Stanislav Shutov, Vladislav Kurak, and Olena Andronova — Kherson National Technical University, 24, Berislavske shose, Kherson, 73008, Ukraine

Liquid phase heteroepitaxy difficulties appeared due to chemical potentials of solution-melt and substrate are differ and lattice constants of epitaxial layer and substrate are usually mismatched lead to violation of crystallization interface. As a result, it leads to deviation of epitaxial layer thickness and composition from needed ones for realization of planar device structure based on heterojunctions.

Mechanical stress that appears at heteroepitaxy and produce both increasing of solid phase chemical potential and crystallization interface perturbation, demands a short period additional supercooling on crystallization interface and high crystallization rate during initial stages of growth. To provide high structural perfection after initial growth the long period of equilibrium crystallization must follow.

Foregoing facts lead to main requirement to heat flow through substrate: it must be easy controlled, low inertial and time unlimited.

In present work we consider a possibility of substrate cooling by external reactor gas feeding for producing of crystallization conditions that consecutively combine properties both pulse and with quasiequilibrium conditions growth methods.

Model of heat-mass transfer for a priori determination of cooling gas consumption was examined experimentally.