Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

DS: Dünne Schichten

DS 6: Thin film analysis III

DS 6.5: Vortrag

Montag, 27. März 2006, 15:30–15:45, GER 38

Inhomogeneities in film properties deposited in large area magnetron sputter devices — •Ronny Kleinhempel, Benjamin Graffel, Gunar Kaune, Hartmut Kupfer, Walter Hoyer, and Frank Richter — Chemnitz University of Technology, Institute of Physics, D-09107 Chemnitz

An industrial application of thin films requires optimized functional film properties as well as a lateral homogeneity of these parameters. Especially by using large area deposition devices like rectangular magnetron sources it is necessary to keep the process parameters constant at each substrate point. We deposited indium tin oxide (ITO) films using a dual magnetron powered by a sine-wave generator at a frequency of 70 kHz and constant power of 4 kW. The films were deposited by reactive sputtering from rectangular (130x400 mm²) alloy targets (In-90/Sn-10) in an Ar/O₂ gas mixture. The substrates were either moved (dynamic deposition) or kept at a fixed position in front of the targets. For a high deposition rate and a low electrical resistivity it is preferable to work in the transition mode at set-points close the metallic target mode. This includes the risk that a small decrease of oxygen partial pressure causes a lower film transparency. This fact does not appear in a homogeneous way, but it appears always at the same substrate position. These lateral inhomogeneities are reflected in film properties like electrical resistivity, average grain size and residual stress as well. Discussing the film properties and the results of plasma measurements reveals that low transparency is connected to a smaller charge carrier density in the plasma. The reduced charge carrier density results in a lower residual stress.