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DS: Dünne Schichten

DS 7: Mechanical properties of thin films

DS 7.5: Vortrag

Montag, 27. März 2006, 17:00–17:15, GER 38

Stress in TiO₂ thin films — •Janika Boltz, Dieter Mergel, Nicolas Wöhrl, and Buck Volker — Thin film working group, Physics Department, University Duisburg-Essen, 45117 Essen

Thin films of TiO₂ have been prepared on silicon substrates by rf diode sputtering. Substrate temperature, sputter pressure and oxygen content in the sputter gas have been varied to obtain a variety of microstructures.

For every sample, mass density, film stress and crystallinity have been determined. The mass density ranges between 3.2 and 4.2 g/cm³. The films exhibit amorphous, anatase, rutile and mixed structures depending on the preparation conditions.

The film stress is in the range +0.2 GPa (tensile) to -2 GPa (compressive). It is mainly determined by the sputter pressure during deposition and the mass density of the films. By measuring the temperature dependence of the film stress, intrinsic and thermal stress can be distinguished.