Dresden 2006 – scientific programme

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DS: Dünne Schichten

DS 8: Functional thin films I

DS 8.1: Invited Talk

Tuesday, March 28, 2006, 09:30–10:15, GER 37

Strained silicon - transistor performance increase with new materials — •Michael Hecker, Liang Zhu, Jochen Rinderknecht, Holm Geisler, and Ehrenfried Zschech — AMD Saxony LLC & Co. KG Dresden, Wilschdorfer Landstrasse 101, D-01109 Dresden

In semiconductor industry, there is an ongoing tendency of downscaling device dimensions, accompanied by a continuous improvement of transistor performance. However, there are physical limits of downscaling within the present CMOS technology. One possibility to improve the device performance nevertheless is to introduce dedicated strain into the channel region of the field-effect transistors. Whereas global strain on the whole wafer level has been extensively investigated in the previous years, there is a rapidly increasing interest in generating local strain on the scale of single transistor channels. The talk compares several methods to create strain in the active regions for N- and PMOS transistors. To achieve the desired performance gains, huge strains and related stresses ranging into the GPa region are necessary in silicon. Detection and measurement of such stresses in unpatterned films can be achieved by several methods, whereas actually stress or strain determination with high spatial resolution in local device regions is crucial. As a promising technique to measure the local strain state, a Raman spectroscopy approach is discussed.