Dresden 2006 – scientific programme

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DS: Dünne Schichten

DS 8: Functional thin films I

DS 8.4: Talk

Tuesday, March 28, 2006, 10:45–11:00, GER 37

Ultra thin dielectric film on silicon — •Ali Bahari P. — Physics Department, Mazandran University, Iran

In the current CMOS CPU generation the silicon gate oxide is 1.2 nm thick. A shrinking of this thickness with one atomic layer for the next generation will lead to a couple of orders of magnitude increase in tunneling current. Another critical issue for future generations is gate oxide degradation due to boron penetration into the oxide from the poly- silicon gate electrode. We have recently demonstrated a number of new processes to grow ultra thin silicon nitride and aluminium oxides, based on the self limiting nature of the direct interaction between atomic nitrogen produced in a microwave discharge and heated silicon surfaces. The procedure to grow ultra thin films of aluminium oxide (and nitride) employ a two step process including evaporation of aluminium to less than monolayer coverage followed by gas exposure at room temperature. The pure ultrathin silicon nitride and aluminium oxide (and nitride) films have been grown and studied on silicon in ultrahigh vacuum and studied by XPS and synchrotron in SDU and Aarhus facilities in Denmark. The obtained results indicate that it might be possible to substitute silicon oxide with silicon nitride or aluminium oxide films.