Dresden 2006 – scientific programme

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DS: Dünne Schichten

DS 9: Functional thin films II

DS 9.2: Talk

Tuesday, March 28, 2006, 11:30–11:45, GER 37

High-k Metal-Insulator-Metal Capacitors for Radio Frequency Mixed-Signal Application — •Christian Wenger, Anil U. Mane, Roland Sorge, Guenter Weidner, Thomas Schroeder, Jarek Dabrowski, Gunther Lippert, Peter Zaumseil, and Hans-Joachim Muessig — IHP microelectronics

RF (radio frequency) SiGe technologies make it possible to integrate the RF section of wireless devices with baseband processors. The RF circuits convert the input radio signals into signals that can be converted into digital data for the baseband processor. The ADC/DAC conversion is integrated into the SiGe technology, furthermore MIM capacitors occupy a large area of the signal conversion part. Thus the introduction of high-k materials into MIM capacitors to reduce the area attracts much attention. Due to the restrict capacitance voltage linearity requirements, the electrical performance of MIM capacitors with a single layer high-k dielectric miss these requirements. However, the voltage linearity can be engineered by using a stacked structure of high-k and Silicondioxide dielectrics. Stacked MIM capacitors with high capacitance density and engineered voltage linearity will be presented.