DS 9: Functional thin films II
Tuesday, March 28, 2006, 11:15–12:45, GER 37
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11:15 |
DS 9.1 |
Characterization of Chemical Bonding in Low-K Dielectric Materials for Interconnect Isolation: XAS and EELS Study — •P. Hoffmann, D. Schmeißer, F. Himpsel, H.-J. Engelmann, E. Zschech, H. Stegmann, and J.D. Denlinger
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11:30 |
DS 9.2 |
High-k Metal-Insulator-Metal Capacitors for Radio Frequency Mixed-Signal Application — •Christian Wenger, Anil U. Mane, Roland Sorge, Guenter Weidner, Thomas Schroeder, Jarek Dabrowski, Gunther Lippert, Peter Zaumseil, and Hans-Joachim Muessig
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11:45 |
DS 9.3 |
Growth and stress evolution of reactively sputtered ZrN films — •Patrick Karimi and Matthias Wuttig
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12:00 |
DS 9.4 |
Stöchiometrische Eigenschaften von, in Atmosphärendruckplasma abgeschiedenen, SiOx-Schichten — •Marcel Hähnel, Volker Brüser, and Holger Kersten
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12:15 |
DS 9.5 |
Titanium at the interface between Si and high-k silicates — •Jarek Dabrowski, Grzegorz Lupina, Gunther Lippert, Anil Mane, and Hans-Joachim Müssig
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12:30 |
DS 9.6 |
Quantenkinetic description of the electron-phonon-interaction in intersubband systems — •Stefan Butscher and Andreas Knorr
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