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DY: Dynamik und Statistische Physik

DY 16: Growth Processes and Surface Properties

DY 16.6: Vortrag

Montag, 27. März 2006, 17:30–17:45, H\"UL 186

Surface processes during low energy ion bombardment of glassy metallic thin films — •Sebastian Vauth and S. G. Mayr — I. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany

Thin glassy metallic Zr₆₅Al_7.5Cu_27.5 films are prepared by cocondensing the three components by electron beam evaporation under UHV conditions. After that the sample is irradiated in situ with keV-Kr⁺-ions and the surface topographies are analyzed by scanning tunneling microscopy (STM) with respect to structure formation and smoothing. The studies are performed as a function of irradiation conditions, viz. ion energy and fluence. The STM data are numerically analyzed by calculating the root mean square roughness and spectral power densities to track down the underlying surface mechanisms of structure formation. To get insight on a microscopic level we perform molecular dynamics (MD) simulations of glassy CuTi and Si films. We investigate temperature activated processes in comparison with processes caused by ion bombardment. To model the experimental results on a mesoscopic level we make use of stochastic rate equations describing the surface morphology. In similarity to equations to model film growth we develop an equation for irradiation based on our experimental and MD data. This work is financially supported by the DFG Sonderforschungsbereich 602, TP B3.