Dresden 2006 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 12: Symposium Quantum optics in semiconductors I

HL 12.1: Fachvortrag

Dienstag, 28. März 2006, 11:15–11:45, HSZ 01

Single Photon Nanotechnology based on Semiconductor Quantum Dots — •A. J. Shields — Quantum Information Group, Toshiba Research Europe Ltd, 260 Cambridge Science Park, Milton Road, Cambridge CB4 0WE UK

The potential application of quantum optics in areas such as secure optical communications and ultra-fine imaging has stimulated research on novel components for the generation and detection of single photons. We summarise here progress on quantum photonics based on integrating semiconductor quantum dots into conventional semiconductor devices. The electroluminescence of a single quantum dot in a p-i-n junction can be used to realise a light emitting diode (LED) for single photons.[1] We describe here recent work on incorporating cavities to enhance the emission efficiency,[2] control the polarisation of the emission,[3] as well as gating schemes to reduce the jitter in the emission time and exceed GHz repetition rates.[4] Engineering the dot nanostructure allows the emission wavelength to be tuned to the fibre optic transmission band at 1300nm.[5] We show also that quantum dots integrated inside resonant tunnelling diodes make efficient, low noise detectors of single photons.[6]

[1] Yuan et al, Science 295, 102 (2002)

[2] Bennett et al, Appl. Phys. Lett. 86, 181102 (2005)

[3] Unitt et al, Phys. Rev. B 72, 033318 (2005)

[4] Bennett et al, Phys. Rev. B 72, 033316 (2005)

[5] Ward et al, Appl. Phys. Lett. 86, 201111 (2005)

[6] Blakesley et al, Phys. Rev. Lett. 94, 067401 (2005)