Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 14: II-VI semiconductors I
HL 14.3: Vortrag
Dienstag, 28. März 2006, 11:30–11:45, POT 151
Excitonic-recombination dynamics of individual ZnO nanowires — •Lars Wischmeier, Tobias Voss, Ilja Rückmann, and Jürgen Gutowski — Institute of Solid State Physics, University of Bremen, P.O. Box 330440, D-28334 Bremen
Zincoxide (ZnO) nanowires show near band-edge photoluminescence (PL) in the UV spectral region (Egap = 3.37 eV at room temperature) and have therefore recently attracted many research activities because they are considered to be promising building blocks for nanometer-scale optoelectronic devices. Here the optical properties of individual nanowires with diameters < 200 nm prepared from an as-grown ensemble are analyzed.
The PL of ZnO is composed of various near band-edge emissions which are accompanied by phonon-assisted recombinations. These different emissions of an individual nanowire are measured time-resolved by a combination of a micro-photoluminescence setup and the time-correlated single-photon counting technique. The temporal development of the PL is studied as a function of intensity, temperature, and size of the wires. From the experimental results the decay times are determined. The results are analyzed by use of rate equations to model the excitonic recombination processes.
Additionally the results performed on an individual nanowire are compared to the results performed on the as-grown nanowire ensemble.