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HL: Halbleiterphysik

HL 14: II-VI semiconductors I

HL 14.4: Vortrag

Dienstag, 28. März 2006, 11:45–12:00, POT 151

Optical and microelectrical characterization of ZnO single crystals implanted with group V elements — •Matthias Brandt¹, Holger von Wenckstern¹, Gabriele Benndorf¹, Jörg Lenzner¹, Heidemarie Schmidt¹, Michael Lorenz¹, Marius Grundmann¹, Gabriel Braunstein², and Gerhard Brauer³ — ¹Universität Leipzig, Institut für Experimentelle Physik II, Leipzig, Germany — ²University of Central Florida, Department of Physics, Orlando, Florida, USA — ³Institut für Ionenstrahlphysik und Materialforschung, FZ Rossendorf, Dresden, Germany

We have implanted ZnO single crystals produced by pressurized melt growth with nitrogen, phosphorous and arsenic ions, as well as with argon. The samples have been annealed at temperatures ranging from 300 to 1000^∘C in an oxygen atmosphere for 45 minutes or in air for 60 minutes. They were characterized optically by cathodoluminescence and photoluminescence measurements and electrically by scanning capacitance microscopy and scanning surface potential microscopy. Results have been compared to the properties of as-grown samples. We find a strong dependence on a) the implanted species and b) the annealing temperature. An intense donor-acceptor pair transition was observed in luminescence of N-implanted crystals annealed at 700^∘C only. Strong indication for a p-type conductivity surface layer was found for P-implanted ZnO annealed at 700^∘C.