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HL: Halbleiterphysik

HL 15: III-V semiconductors II

HL 15.3: Vortrag

Dienstag, 28. März 2006, 11:30–11:45, POT 51

RARE-EARTH DOPANT IMPLANTATION INTO GAN AND ZNO — •R. Nédélec¹, R. Vianden¹, and ISOLDE Collaboration² — ¹HISKP, Nußallee 14-16, D-53115 Bonn, Germany — ²CERN, CH-1211 Genève, Switzerland

In the past, wide band-gap semiconductors for optical, high-power and high-temperature application have been intensively investigated. The observation of room temperature luminescence for various Rare Earth dopants in GaN has stimulated further interest in the incorporation these impurities in appropriate host lattices. A convenient way of introducing impurities into semiconductors is ion implantation. In order to study the implantation induced damage and its recovery by annealing we used the perturbed angular correlation technique (PAC). Our samples were implanted at the ISOLDE facility at CERN and then treated in a rapid thermal annealing furnace.

We have studied the annealing behaviour and the temperature dependence of the electric field gradient (EFG) using the Rare Earth PAC probe 172-Lu. The temperature dependence was investigated for temperatures below and above room temperature. The results will be discussed and compared to results obtained with the PAC probe 181-Hf.