Dresden 2006 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Halbleiterphysik
HL 15: III-V semiconductors II
HL 15.8: Vortrag
Dienstag, 28. März 2006, 12:45–13:00, POT 51
Segregation of Antimony in InP in MOVPE — •Martin Leyer1, S. Weeke1, M. Pristovsek1, and Prof. Dr. W. Richter2 — 1Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany — 2Università di Roma Tor Vergata, Dipartimento di Fisica, Via della Ricerca Scientifica 1, I-00133 Roma, Italy
The optimization of GaAs0.5Sb0.5/InP interfaces in semiconductor devices is a critical point since antimony segregation is a well known phenomenon. We investigated this segregation in MOVPE in-situ with Reflectance Anisotropy Spectroscopy. InP layers were exposed to different amounts of TMSb and afterwards overgrown with InP. An unexpected second antimony containing layer developed in a distance between 50 – 200nm. This double layer structure was confirmed by SIMS and X-Ray diffraction measurements. We systematically studied the position of the second Sb layer as a function of temperature, precursor partial pressure and amount of antimony on the semiconductor surface. The existence of a second Sb layer could be explained by a quasi liquid surface phase above InSb melting point of 527oC.