HL 15: III-V semiconductors II
Dienstag, 28. März 2006, 11:00–13:15, POT 51
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11:00 |
HL 15.1 |
Incorporation of N at GaAs and InAs Surfaces — •Hazem Abu-Farsakh, Alexey Dick , and Jörg Neugebauer
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11:15 |
HL 15.2 |
Combining quasiparticle energy calculations with exact-exchange density-functional theory: the bandgap of InN — •Patrick Rinke, Abdallah Qteish, Jörg Neugebauer, and Matthias Scheffler
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11:30 |
HL 15.3 |
RARE-EARTH DOPANT IMPLANTATION INTO GAN AND ZNO — •R. Nédélec, R. Vianden, and ISOLDE Collaboration
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11:45 |
HL 15.4 |
Evolution of N Defect States and Optical Transitions in Ordered and Disordered GaP1−xNx Alloys — •Eoin OReilly, Clive Harris, and Andrew Lindsay
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12:00 |
HL 15.5 |
Magneto-excitons in GaInNAs / GaAs quantum well structures — •M. Hetterich, A. Grau, W. Löffler, and H. Kalt
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12:15 |
HL 15.6 |
The influence of defects on the recomination dynamics in InGaN quantum wells grown on sapphire and GaN substrates — •T. Stempel Pereira, M. Dworzak, A Hoffmann, G. Franssen, T. Suski, S. Grzanka, R. Czernecki, M. Leszczynski, and I. Grzegory
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12:30 |
HL 15.7 |
Electronic Transport Studies of Single InAs Nanowhiskers — •Quoc Thai Do
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12:45 |
HL 15.8 |
Segregation of Antimony in InP in MOVPE — •Martin Leyer, S. Weeke, M. Pristovsek, and Prof. Dr. W. Richter
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13:00 |
HL 15.9 |
Spectroscopic investigations of GaAsSb/GaAs based structures for 1.3 µm VCSELs — •G. Blume, T.J.C. Hosea, S.J. Sweeney, P.J. Klar, G. Weiser, A. Thränhardt, S.W. Koch, S.R. Johnson, and Y.-H. Zhang
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